? semiconductor components industries, llc, 2007 august, 2007 - rev. 0 1 publication order number: MSB92T1G/d MSB92T1G pnp silicon general purpose high voltage transistor this pnp silicon planar transistor is designed for general purpose amplifier applications. this device is housed in the sc-59 package which is designed for low power surface mount applications. features ? this is a pb-free device maximum ratings (t a = 25 c) rating symbol value unit collector\base v oltage v (br)cbo -300 vdc collector\emitter voltage v (br)ceo -300 vdc emitter\base v oltage v (br)ebo -5.0 vdc collector current - continuous i c 150 madc thermal characteristics rating symbol max unit power dissipation (note 1) p d 150 mw junction t emperature t j 150 c storage temperature range t stg -55 +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. device mounted on a fr\4 glass epoxy printed circuit board using the minimum recommended footprint. marking diagram device package shipping ? ordering information j2d= device marking code m = date code = pb-free package collector 3 2 base 1 emitter http://onsemi.com 3 1 2 sc-59 case 318d style 1 j2d m MSB92T1G sc-59 (pb-free) 3000/t ape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd801 1/d. (note: microdot may be in either location)
MSB92T1G http://onsemi.com 2 electrical characteristics characteristic symbol min max unit collector\emitter breakdown voltage (i c = -1.0 madc, i b = 0) v (br)ceo -300 - vdc collector\base breakdown voltage (i c = -100 adc, i e = 0) v (br)cbo -300 - vdc emitter\base breakdown voltage (i e = -100 adc, i e = 0) v (br)ebo -5.0 - vdc collector\base cutoff current (v cb = -200 vdc, i e = 0) i cbo - -0.25 a emitter-base cutoff current (v eb = -3.0 vdc, i b = 0) i ebo - -0.1 a dc current gain (note 2) (v ce = -10 vdc, i c = -1.0 madc) (v ce = -10 vdc, i c = -10 madc) (v ce = -10 vdc, i c = -30 madc) h fe1 h fe2 h fe3 25 40 25 - - - - collector\emitter saturation voltage (i c = -20 madc, i b = -2.0 madc) v ce(sat) - -0.5 vdc base-emitter saturation v oltage (i c = -20 madc, i b = -2.0 madc) v be(sat) - -0.9 vdc small signal characteristics current-gain - bandwidth product (i c = -10 madc, v ce = -20 vdc, f = 20 mhz) f t 50 - mhz collector-base capacitance (v cb = -20 vdc, i e = 0, f = 1.0 mhz) c cb - 6.0 pf 2. pulse test: pulse width 300 s, d.c. 2%.
MSB92T1G http://onsemi.com 3 c, capacitance (pf) figure 1. dc current gain v r , reverse voltage (volts) 0.1 100 0.1 10 1.0 10 1000 c eb @ 1mhz figure 2. capacitance i c , collector current (ma) v, voltage (volts) 1.4 0.0 1.2 1.0 0.8 0.6 0.4 0.2 100 10 0.1 1.0 100 1.0 c cb @ 1mhz v be(on) @ 25 c, v ce = 10 v v ce(sat) @ 25 c, i c /i b = 10 v be(sat) @ 25 c, i c /i b = 10 v ce(sat) @ 125 c, i c /i b = 10 v ce(sat) @ -55 c, i c /i b = 10 v be(sat) @ 125 c, i c /i b = 10 v be(sat) @ -55 c, i c /i b = 10 v be(on) @ 125 c, v ce = 10 v v be(on) @ -55 c, v ce = 10 v figure 3. ?on? voltages i c , collector current (ma) 120 0.1 1.0 10 100 80 60 0 h fe , dc current gain t j = +125 c 25 c -55 c v ce = 10 vdc 100 20 40
MSB92T1G http://onsemi.com 4 package dimensions sc-59 case 318d-04 issue g e a1 b a e d 1 3 2 c l notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 2.4 0.094 0.95 0.037 0.95 0.037 1.0 0.039 0.8 0.031 mm inches scale 10:1 *for additional information on our pb-free strategy and soldering details, please download the on semiconductor soldering and mounting t echniques reference manual, solderrm/d. soldering footprint* h e dim a min nom max min millimeters 1.00 1.15 1.30 0.039 inches a1 0.01 0.06 0.10 0.001 b 0.35 0.43 0.50 0.014 c 0.09 0.14 0.18 0.003 d 2.70 2.90 3.10 0.106 e 1.30 1.50 1.70 0.051 e 1.70 1.90 2.10 0.067 l 0.20 0.40 0.60 0.008 2.50 2.80 3.00 0.099 0.045 0.051 0.002 0.004 0.017 0.020 0.005 0.007 0.114 0.122 0.059 0.067 0.075 0.083 0.016 0.024 0.110 0.118 nom max h e style 1: pin 1. emitter 2. base 3. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, in cluding without limitation special, consequential or incidental damages. typical parameters which may be provided in scillc data sheets and/or specifications can and do vary in different a pplications and actual performance may vary over time. all operating parameters, including typicals must be validated for each customer application by customer's technical e xperts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc prod uct could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney f ees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was neglig ent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. MSB92T1G/d publication ordering information n. american technical support : 800-282-9855 toll free ?usa/canada europe, middle east and africa technical support: ?phone: 421 33 790 2910 japan customer focus center ?phone: 81-3-5773-3850 literature fulfillment : ?literature distribution center for on semiconductor ?p.o. box 5163, denver, colorado 80217 usa ? phone : 303-675-2175 or 800-344-3860 toll free usa/canada ? fax : 303-675-2176 or 800-344-3867 toll free usa/canada ? email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca sales representative
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